inchange semiconductor product specification silicon npn power transistors 2SD1479 description ? with to-3pn package ? high voltage ,high reliability ? high speed switching ? wide area of safe operation applications ? for horizontal deflect ion output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 2.5 a i cm collector current (pulse) 6 a i bm base current (pulse) 2.5 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1479 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =2a; i b =1a 5.0 v v besat base-emitter saturation voltage i c =2a; i b =1a 1.5 v v cb =750v; i e =0 50 | a i cbo collector cut-off current v cb =1500v; i e =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 50 | a h fe dc current gain i c =2a ; v ce =5v 2 5 t s storage time 9.0 | s t f fall time i c =2.5a i bend =1.1a,l b =10 | h 1.0 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD1479 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
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